mixers - chip 1 HMC1081 v01.0713 gaas mmic mixer 50 - 75 ghz general description features functional diagram passive: no dc bias required low lo power: 12 dbm high lo/rf isolation: 28 db wide if bandwidth: dc to 26 ghz upconversion & downconversion applications die size: 1.23 x 1.21 x 0.1 mm electrical specifcations, t a = +25 c, lo = 50 ghz, lo = +12 dbm, usb [1] typical applications the HMC1081 is ideal for: ? e-band communications systems ? test equipment & sensors ? military end-use ? automotive radar the HMC1081 is a double balanced mixer. it can be used as an upconverter or a downconverter, with dc to 26 ghz at the if port and 50 to 75 ghz at the rf port. this passsive mmic mixer is fabricated with gaas shottky diode technology. all bond pads and the die backside are ti/au metallized and the shottky devices are fully passivated for reliable operation. all data shown herein is measured with the chip in a 50 ohm environment and contacted with rf probes. parameter min. typ. max. units rf frequency range 50 - 7 5 ghz lo frequency range 40 - 85 ghz if frequency range dc - 26 ghz conversion loss 7. 5 10.5 db lo to rf isolation 30 db lo to if isolation 20 db rf to if isolation 22 db ip3 (input) [2] 16 dbm 1 db gain compression (input) [2] 10 dbm [1] unless otherwise noted , all measurements performed as an upconverter with lo = 50 ghz and lo = +12 dbm. [2] measurements performed as an upconverter with lo = 49 ghz and lo = +12 dbm. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
mixers - chip 2 HMC1081 v01.0713 gaas mmic mixer 50 - 75 ghz conversion gain vs. temperature lo= 49 ghz, usb conversion gain vs. lo power lo= 49 ghz, usb conversion gain vs. temperature lo= 50 ghz, usb conversion gain vs. lo power lo= 50 ghz, usb conversion gain vs. temperature lo= 75 ghz, lsb conversion gain vs. lo power lo= 75 ghz,lsb -14 -12 -10 -8 -6 -4 -2 0 50 55 60 65 70 75 10 dbm 12 dbm 14 dbm conversion gain (db) rf frequency (ghz) -14 -12 -10 -8 -6 -4 -2 0 50 55 60 65 70 75 +25 c +85 c -55 c conversion gain (db) rf frequency (ghz) -14 -12 -10 -8 -6 -4 -2 0 50 55 60 65 70 75 +25 c +85 c -55 c conversion gain (db) rf frequency (ghz) -14 -12 -10 -8 -6 -4 -2 0 50 55 60 65 70 75 10 dbm 12 dbm 14 dbm conversion gain (db) rf frequency (ghz) -14 -12 -10 -8 -6 -4 -2 0 50 55 60 65 70 75 10 dbm 12 dbm 14 dbm conversion gain (db) rf frequency (ghz) -14 -12 -10 -8 -6 -4 -2 0 50 55 60 65 70 75 +25 c +85 c -55 c conversion gain (db) rf frequency (ghz) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
mixers - chip 3 HMC1081 v01.0713 gaas mmic mixer 50 - 75 ghz conversion gain vs. lo power lo= 40 ghz, usb conversion gain vs. lo power lo= 44 ghz, usb conversion gain vs. lo power lo= 48 ghz, usb conversion gain vs. lo power if= 10 ghz conversion gain vs. lo power if= 1 ghz -14 -12 -10 -8 -6 -4 -2 0 50 55 60 65 70 75 80 10 dbm 12 dbm 14 dbm conversion gain (db) lo frequency (ghz) -20 -16 -12 -8 -4 0 50 55 60 65 70 75 10 dbm 12 dbm 14 dbm conversion gain (db) rf frequency (ghz) -20 -16 -12 -8 -4 0 50 55 60 65 70 75 10 dbm 12 dbm 14 dbm conversion gain (db) rf frequency (ghz) -20 -16 -12 -8 -4 0 50 55 60 65 70 75 10 dbm 12 dbm 14 dbm conversion gain (db) rf frequency (ghz) -14 -12 -10 -8 -6 -4 -2 0 50 55 60 65 70 75 10 dbm 12 dbm 14 dbm conversion gain (db) rf frequency (ghz) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
mixers - chip 4 HMC1081 v01.0713 gaas mmic mixer 50 - 75 ghz rf return loss if return loss rf/if isolation lo return loss lo/rf isolation lo/if isolation -50 -40 -30 -20 -10 0 50 55 60 65 70 75 lo/rf isolation (db) lo frequency (ghz) -50 -40 -30 -20 -10 0 50 55 60 65 70 75 lo/if isolation (db) lo frequency (ghz) -40 -30 -20 -10 0 50 55 60 65 70 75 rf/if isolation (db) rf frequency (ghz) -30 -25 -20 -15 -10 -5 0 5 40 45 50 55 60 65 70 75 lo-rl return loss (db) lo frequency (ghz) -25 -20 -15 -10 -5 0 0 5 10 15 20 25 lo = 44 ghz lo = 50 ghz return loss (db) rf frequency (ghz) -25 -20 -15 -10 -5 0 40 45 50 55 60 65 70 75 80 85 90 lo = 44 ghz lo = 50 ghz return loss (db) rf frequency (ghz) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
mixers - chip 5 HMC1081 v01.0713 gaas mmic mixer 50 - 75 ghz p1db, lo= 49 ghz, usb input ip3, lo= 49 ghz, usb 0 4 8 12 16 20 50 55 60 65 70 75 lo = 12 dbm p1db (dbm) rf frequency (ghz) 0 5 10 15 20 25 30 35 50 55 60 65 70 75 lo= 12 dbm lo= 14 dbm ip3 (dbm) rf frequency (ghz) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
mixers - chip 6 HMC1081 v01.0713 gaas mmic mixer 50 - 75 ghz outline drawing notes: 1. all dimensions are in inches [mm]. 2. die thickness is 0.004 3. bond pads 1, 2 & 3 are 0.0059 [0.150] x 0.0039 [0.099]. 4. backside metallization: gold. 5. bond pad metallization: gold. 6. backside metal is ground. 7. connection not required for unlabeled bond pads. 8. ov erall die size 0 .002 electrostatic sensiti v e de v ice obser v e handling precautions standard alternate gp-1 (gel pack) [2] [1] for more information refer to the packaging information document in the product support section of our website. [2] for alternate packaging information contact hittite microwave corporation. rf input +3 dbm lo drive +20 dbm if input 0 dbm maximum junction temperature 170 c thermal resistance (r th ) (junction to die bottom) 823 c/w operating temperature -55 to +85 c storage temperature -65 to 150 c esd sensitivity (hbm) class1a passed 250 v absolute maximum ratings die packaging information [1] for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
mixers - chip 7 HMC1081 v01.0713 gaas mmic mixer 50 - 75 ghz pad descriptions pad number function description pad schematic 1 lo this pad is ac coupled and matched to 50 ohms. 2 rf this pad is ac coupled and matched to 50 ohms. 3 if this pad is dc coupled and matched to 50 ohms. die bottom gnd die bottom must be connected to rf/dc ground assembly diagram for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
mixers - chip 8 HMC1081 v01.0713 gaas mmic mixer 50 - 75 ghz mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip (figure 1). one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly- tab) which is then attached to the ground plane (figure 2). microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protec - tive containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against > 250 v esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick- up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fat. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom - mended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
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